The influence of surface treatment prior to the deposition of Pd/Au me
tallic contacts to p-type ZnSe is discussed, The methods studied being
a sulphur based treatment and a CuSex contact treatment. The results
show that both of these form better quality contacts, with lower appli
ed voltages for set current densities, in comparison to an untreated s
ample. Although, the barrier height increased for the sulphur treated
sample, by 0.11 eV to 0.69 eV, the active contact area was increased b
y an order of magnitude. The CuSex treatment is shown to reduce the Sc
hottky barrier height to 0.50 eV but the active contact area was sever
ely reduced in this case.