IMPROVEMENT OF DARK CURRENT-DENSITY OF ALINAS INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTOR USING PHOSPHINE-PLASMA-TREATED SCHOTTKY-BARRIER/

Authors
HIRATA D SUGINO T SHIRAFUJI J
Citation
D. Hirata et al., IMPROVEMENT OF DARK CURRENT-DENSITY OF ALINAS INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTOR USING PHOSPHINE-PLASMA-TREATED SCHOTTKY-BARRIER/, JPN J A P 1, 35(3), 1996, pp. 1779-1780
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
35
Issue
3
Year of publication
1996
Pages
1779 - 1780
Database
ISI
SICI code
Abstract
AlInAs/InGaAs metal-semiconductor-metal (MSM) photodetectors with a lo w dark current density are fabricated using a surface modification pro cess with phosphine (PH3) plasma. Phosphidization of the AlInAs cap la yer reduces the surface state density and allows formation of high Sch ottky barrier with a tunnel metal-insulator-semiconductor (MIS) struct ure. A dark current density as low as 0.021 pA/mu m(2) at 10 V is obta ined.