OXIDATION BEHAVIOR OF TA THIN-FILMS AS A PASSIVATION LAYER DEPOSITED ON CU

The oxidation behavior oi Ta films (500 Angstrom) deposited on Cu as a passivation layer to protect Cu from oxidation has been examined. In the present Ta thin films on Cu, the kinetics of oxidation agree well with one reported in the larger thickness range. Although the outdiffu sion of a small amount of Cu through the Ta layer is observed, the Ta layer is effective as a passivation layer during oxidation at 450 degr ees C for 1 h, where the entire Ta layer is completely oxidized.