Aluminum nitride (AlN) thin films are deposited on Coming 7059 glass a
t low substrate temperature by reactive RF magnetron sputtering. The s
tructural and morphological characterizations are found to be sensitiv
e to deposition conditions such as sputtering pressure, RF power, subs
trate temperature and N-2 concentration. A highly oriented AlN (002) p
lane parallel to the substrate surface is identified by X-ray diffract
ion (XRD) measurement and a dense pebble-like surface texture is obser
ved by scanning electron microscopy (SEM). The cross-sectional SEM mic
rograph shows that well-aligned columnar structures with preferred ori
entation along the c-axis exist in the AlN thin film. However, a selec
ted-area diffraction (SAD) pattern shows that some other planes exist
in the deposited film, though only a hexagonal AlN (002) plane is obta
ined by XRD.