POLARIZATION OF HOT PHOTOLUMINESCENCE IN GAAS ALAS SUPERLATTICES/

Citation
Vf. Sapega et al., POLARIZATION OF HOT PHOTOLUMINESCENCE IN GAAS ALAS SUPERLATTICES/, JETP letters, 63(4), 1996, pp. 305-310
Citations number
5
Categorie Soggetti
Physics
Journal title
ISSN journal
00213640
Volume
63
Issue
4
Year of publication
1996
Pages
305 - 310
Database
ISI
SICI code
0021-3640(1996)63:4<305:POHPIG>2.0.ZU;2-N
Abstract
The polarization characteristics of hot photoluminescence in GaAs/AlAs superlattices are investigated experimentally and theoretically. It i s shown that the formation of an electronic miniband in the superlatti ce substantially changes the polarization characteristics of the photo luminescence. As a result of the quasi-three-dimensional character of the motion of hot electrons in the superlattice, the polarization depe nds on the ratio of the electron kinetic energies in the plane of the superlattice and along the axis of the superlattice. (C) 1996 American Institute of Physics.