SELF-INTERACTION-CORRECTED ELECTRONIC-STRUCTURE OF LA2CUO4

We have applied the self-interaction-corrected (SIC) local-spin-densit y-approximation (LSDA) formalism to La2CUO4. In contrast to the local- spin-density result the self-interaction-corrected formalism yields co rrectly an antiferromagnetic semiconducting ground state as found expe rimentally. The band gap of 2.1 eV and spin magnetic moment of 0.66mu( B) Compare favorably with experimental values. The bonding properties are correctly described proving that the SIC LSDA is also capable of d escribing the properties that have been correctly predited within LSDA .