MECHANISM FOR DISORDER ON GAAS(001)-(2X4) SURFACES

Citation
Ar. Avery et al., MECHANISM FOR DISORDER ON GAAS(001)-(2X4) SURFACES, Physical review letters, 76(18), 1996, pp. 3344-3347
Citations number
15
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
76
Issue
18
Year of publication
1996
Pages
3344 - 3347
Database
ISI
SICI code
0031-9007(1996)76:18<3344:MFDOGS>2.0.ZU;2-6
Abstract
An atomistic model is presented based on scanning tunneling microscopy results and tight binding calculations which explains the observation of disorder on the GaAs(001)-(2 X 4) surface grown by molecular beam epitaxy. Calculations show that occupation by As of vacant Ga sites in the missing dimer trenches of the (2 X 4) unit cell is responsible fo r the surface disorder in the form of kinks in the dimer rows. The dis ordered surface is energetically favorable for a range of additional A s coverage up to 0.25 monolayer.