STRUCTURAL-ANALYSIS OF INGAAS TENSILE LAYERS ON INP

Authors
DIEGUEZ A CLARK SA CORNET A ROURA P PEIRO F WILLIAMS RH MORANTE JR
Citation
A. Dieguez et al., STRUCTURAL-ANALYSIS OF INGAAS TENSILE LAYERS ON INP, Materials science and technology, 12(2), 1996, pp. 190-192
Citations number
11
Categorie Soggetti
Metallurgy & Metallurigical Engineering","Material Science
Journal title
Materials science and technology → ACNP
ISSN journal
02670836
Volume
12
Issue
2
Year of publication
1996
Pages
190 - 192
Database
ISI
SICI code
0267-0836(1996)12:2<190:SOITLO>2.0.ZU;2-S
Abstract
Transmission electron microscopy and optical absorption measurements o n the InxGa1-xAs tensile layers grown on InP (001), having a range of In composition varying between 42.0 and 51.6% and thicknesses of 0.1 a nd 0.4 mu m, have been carried out. The characteristics of the growth mode depending on strain and layer thickness are presented, showing th e degradation of the epilayer with increasing mismatch. In these tensi le layers, a random three-dimensional mode of growth leading to a very rough surface morphology has been found in the most mismatched layers studied. (C) 1996 The Institute of Materials.