SCATTERING THEORETIC APPROACH TO THE ELECTRONIC-STRUCTURE OF DOUBLE-BARRIER QUANTUM-WELL HETEROSTRUCTURE

The effects of aperiodicity, indirect bandgap, band non-parabolicity, multi-orbital and external bias on the AlAs/GaAs/AlAs double-barrier q uantum-well structure in the [001] direction are considered explicitly by using the Green's function? scattering theory incorporated with sp (3)s band structures of constituent semiconductors. The calculated sp ectral local density of states simultaneously exhibits confined states originated from both quantum-well Gamma-valley and barrier X-valley. Multi-orbital features of electron and hole states of the heterostruct ure, and the effect of the external bias on the local density of state s are displayed. The calculated energies of confined quantum-well elec tron states and Eight-hole states are compared With the reported photo luminescence excitation experimental data.