Some new photoluminescence phenomena, which have not been observed for
conventional coarse grain materials, are reported for nanostructured
materials, such as nanostructured eta, gamma - Al2O3, boehmite, TiO2 (
anatase), and amorphous silicon nitride. In this article we discussed
the mechanisms of these new luminescence phenomena appearing in nanost
ructured materials in terms of quantum confinement effect, impurity an
d defect energy levels in the energy gap and destruction of selection
rules of electronic transitions.