INFLUENCE OF SI SUBSTRATE ON AL-CU THIN-FILM INTERACTION AND COMPOUNDFORMATION

The phase formation and its growth in samples of Al/Cu and Si/Al/Cu in the temperature range from 620 to 680 K are investigated. Cu9Al4, Al2 Cu, and Cu15Si4 are detected in samples with Si substrate. On the othe r hand, AlCu rather than Cu15Si4 is detected in samples without substr ate. Time evolution of compound formation is determined. The first pha se formed is mainly Al2Cu and the final phase depends on the relative thickness of the metal film. The effect of external stress on the incu bation time of precipitation is discussed based on the conventional mo lecular dynamics method.