THE INFLUENCE OF DRIFT-DIFFUSION PROCESSES ON IV CHARACTERISTICS OF SI SCHOTTKY DIODES

Authors
SIMEONOV SS KAFEDJIISKA EI GUERASSIMOV AL
Citation
Ss. Simeonov et al., THE INFLUENCE OF DRIFT-DIFFUSION PROCESSES ON IV CHARACTERISTICS OF SI SCHOTTKY DIODES, Physica status solidi. a, Applied research, 136(2), 1993, pp. 393-400
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
136
Issue
2
Year of publication
1993
Pages
393 - 400
Database
ISI
SICI code
0031-8965(1993)136:2<393:TIODPO>2.0.ZU;2-Z
Abstract
A more accurate approximation for the diffusion velocity in the space- charge layer of Schottky diodes is obtained. The influence of the depe ndence of the diffusion velocity on the applied voltage to the slope o f I-Y characteristics, calculated by the combined thermionic emission- diffusion theory of current in Schottky diodes, is taken into account. It is shown that this influence is of the same magnitude as the image force effect on I-V characteristics of Schottky diodes on Si substrat es with donor doping around 10(15) cm-3.