We propose in this paper an original way to elaborate cermet thin film
s: cluster deposition. Bi-SiOx cermets have been produced by codeposit
ion of neutral Bi-900 clusters and SiOx molecules. A Transmission Elec
tron Microscopy study shows that these new cermets are formed by isola
ted Bi grains which size corresponds to that of the incident clusters.
Then, this technique allows a control of the size of the metallic par
ticles in the nanometric range. By in-situ measurements of the resista
nce during deposition as a function of the thickness, we have determin
ed the percolation threshold of these cermet thin films for different
metallic volume concentrations.