ELECTRON-PARAMAGNETIC-RESONANCE OF THE SCANDIUM ACCEPTOR IN 6H SILICON-CARBIDE

Authors
MARZ M REINKE J GREULICHWEBER S SPAETH JM OVERHOF H MOKHOV EN ROENKOV AD KALABUKHOVA EN
Citation
M. Marz et al., ELECTRON-PARAMAGNETIC-RESONANCE OF THE SCANDIUM ACCEPTOR IN 6H SILICON-CARBIDE, Solid state communications, 98(5), 1996, pp. 439-443
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
98
Issue
5
Year of publication
1996
Pages
439 - 443
Database
ISI
SICI code
0038-1098(1996)98:5<439:EOTSAI>2.0.ZU;2-R
Abstract
In a Sc-doped 6H-SiC epitaxial layer on an n-type 6H-SiC substrate thr ee new electron paramagnetic resonance (EPR) spectra were observed. Th ey are explained as being due to the isolated Sc acceptor on the three inequivalent sites in 6H-SiC having S = 1/2. The analysis of the EPR spectra shows that Sc resides on carbon sites. The results are discuss ed on the basis of selfconsistent calculations for Sc-Si in silicon.