Cs. Son et al., EFFECTS OF RAPID THERMAL ANNEALING ON THE ELECTRICAL-PROPERTIES OF HEAVILY CARBON-DOPED INGAAS, Solid state communications, 98(5), 1996, pp. 475-478
The effects of rapid thermal annealing (RTA) on the electrical propert
ies of carbon-doped InGaAs epilayers have been analyzed by the Van der
Pauw-Hall measurement. After RTA, the highest hole concentration of 3
.3 x 10(20) cm(-3) at In0.09Ga(0.91)As epilayer was obtained. RTA proc
esses cause the inactivated carbon atoms to be active by breaking C-H
or C-H, bonds in the epilayers. This leads to the increase of the hole
concentration. Below the InAs mole fraction of 0.35, we have obtained
the maximum activation efficiency of the carbon atoms at the RTA temp
erature of 650 degrees C. The activation efficiency decreased with inc
reasing InAs mole fraction. The type conversion from p-type to n-type
took place after RTA at the InAs mole fraction of 0.44, while it occur
red at that of 0.48 in the as-grown. The reason for the shift of the t
ype conversion to the lower value after RTA would be due to the outdif
fusion of In atoms in the InGaAs epilayer, and the activated carbon at
oms would more effectively enter into In sites than As sites due to th
e outdiffusion of In atoms.