DIELECTRIC-DISPERSION AT THE ZERO-FIELD LOCK-IN TRANSITION IN THIOUREA CRYSTAL

Authors
Citation
Sy. Kang et Jj. Kim, DIELECTRIC-DISPERSION AT THE ZERO-FIELD LOCK-IN TRANSITION IN THIOUREA CRYSTAL, Physical review. B, Condensed matter, 47(18), 1993, pp. 12263-12265
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
47
Issue
18
Year of publication
1993
Pages
12263 - 12265
Database
ISI
SICI code
0163-1829(1993)47:18<12263:DATZLT>2.0.ZU;2-3
Abstract
Splitting of the dielectric-constant peak at T congruent-to 177.1 K wa s observed in the high-frequency measurements at zero bias field in th e very narrow range of temperature across the 1/8 lock-in transition i n thiourea. This frequency-dependent splitting of the dielectric-const ant peak associated with the 1/8 lock-in transition could be explained in terms of temperature-dependent relaxation time.