Kk. Loi et al., HIGH-EFFICIENCY 1.3 MU-M INASP-GAINP MQW ELECTROABSORPTION WAVE-GUIDEMODULATORS FOR MICROWAVE FIBEROPTIC LINKS, IEEE photonics technology letters, 8(5), 1996, pp. 626-628
High-efficiency electroabsorption waveguide modulators have been desig
ned and fabricated using strain-compensated InAsP-GaInP multiple quant
um wells at 1.32-mu m wavelength, A typical 200-mu m-long modulator ex
hibits a fiber-to-fiber optical insertion loss of 9 dB and an optical
saturation intensity larger than 10 mW, The 3-dB electrical bandwidth
is in excess of 20 GHz with a 50-Omega load termination, When used in
an analog microwave fiber-optic link without amplification, a RF link
efficiency as high as -38 dB Is achieved at 10 mW input optical carrie
r power, These analog link characteristics are the first reported usin
g MQW electroabsorption waveguide modulators at 1.32 mu m.