HIGH-EFFICIENCY 1.3 MU-M INASP-GAINP MQW ELECTROABSORPTION WAVE-GUIDEMODULATORS FOR MICROWAVE FIBEROPTIC LINKS

Citation
Kk. Loi et al., HIGH-EFFICIENCY 1.3 MU-M INASP-GAINP MQW ELECTROABSORPTION WAVE-GUIDEMODULATORS FOR MICROWAVE FIBEROPTIC LINKS, IEEE photonics technology letters, 8(5), 1996, pp. 626-628
Citations number
5
Categorie Soggetti
Optics,"Physics, Applied
ISSN journal
10411135
Volume
8
Issue
5
Year of publication
1996
Pages
626 - 628
Database
ISI
SICI code
1041-1135(1996)8:5<626:H1MIME>2.0.ZU;2-F
Abstract
High-efficiency electroabsorption waveguide modulators have been desig ned and fabricated using strain-compensated InAsP-GaInP multiple quant um wells at 1.32-mu m wavelength, A typical 200-mu m-long modulator ex hibits a fiber-to-fiber optical insertion loss of 9 dB and an optical saturation intensity larger than 10 mW, The 3-dB electrical bandwidth is in excess of 20 GHz with a 50-Omega load termination, When used in an analog microwave fiber-optic link without amplification, a RF link efficiency as high as -38 dB Is achieved at 10 mW input optical carrie r power, These analog link characteristics are the first reported usin g MQW electroabsorption waveguide modulators at 1.32 mu m.