RESONANT-CAVITY ENHANCED GAINASSB-ALASSB PHOTODETECTOR GROWN BY MBE FOR MID-IR APPLICATIONS

Resonant cavity enhanced photodetectors based on GaInAsSb-GlAsSb grown by MBE have been successfully fabricated and characterized to operate at near 2 mu m wavelength range, By incorporating a 10-pair lattice m atched AlAsSb-GaSb quarter wavelength reflector, strong cavity enhance ment of photoresponse and post-growth selectivity of the resonant wave length have been realized, The photodetectors have shown record settin g room temperature performance with a maximum quantum efficiency of et a = 85%, a peak responsivity of R = 1.3 A/W and a detectivity D of 1. 35 x 10(10) cm Hz(1/2) W-1 at -0.5-V bias at resonant wavelength.