INSB INFRARED PHOTODETECTORS ON SI SUBSTRATES GROWN BY MOLECULAR-BEAMEPITAXY

The InSb infrared photodetectors grown heteroepitaxially on Si substra tes by molecular beam epitaxy (MBE) are reported, Excellent InSb mater ial quality is obtained on 3-in Si substrates (with a GaAs predepositi on) as confirmed by structural, optical, and electrical analysis, InSb infrared photodetectors on Si substrates that can operate from 77 K t o room temperature have been demonstrated, The peak voltage-responsivi ty at 4 mu m is about 1.0 x 10(3) V/W and the corresponding Johnson-no ise-limited detectivity is calculated to be 2.8 x 10(10) cm . Hz(1/2)/ W. This is the first important stage in developing InSb detector array s or monolithic focal plane arrays (FPA's) on silicon, The development of this technology could provide a challenge to traditional hybrid FP A's in the future.