CHARACTERIZATION OF LOW-TEMPERATURE GAAS GROWN BY MOLECULAR-BEAM EPITAXY

Authors
LEE WC HSU TM CHYI JI LEE GS LI WH LEE KC
Citation
Wc. Lee et al., CHARACTERIZATION OF LOW-TEMPERATURE GAAS GROWN BY MOLECULAR-BEAM EPITAXY, Applied surface science, 92, 1996, pp. 66-69
Citations number
14
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
92
Year of publication
1996
Pages
66 - 69
Database
ISI
SICI code
0169-4332(1996)92:<66:COLGGB>2.0.ZU;2-O
Abstract
Low temperature GaAs has been grown by molecular beam epitaxy at subst rate temperatures between 200 degrees C-400 degrees C, and subsequentl y annealed in the growth chamber at 600 degrees C. These samples have been characterized by X-ray and Raman spectroscopy. From the rocking c urve of a high resolution double crystal X-ray diffraction system we o bserved that GaAs layers grown at low temperatures were highly straine d and contained about 1% excess arsenic, These results have been compa red with an analysis of LO and TO frequency splitting in the Raman spe ctra.