EPITAXIAL-GROWTH OF ZNSEXTE1-X BY THE VPE METHOD AND ITS PHOTOLUMINESCENCE

Authors
MOCHIZUKI K OGURI H KYOTANI T ISSHIKI M
Citation
K. Mochizuki et al., EPITAXIAL-GROWTH OF ZNSEXTE1-X BY THE VPE METHOD AND ITS PHOTOLUMINESCENCE, Applied surface science, 92, 1996, pp. 79-83
Citations number
7
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
92
Year of publication
1996
Pages
79 - 83
Database
ISI
SICI code
0169-4332(1996)92:<79:EOZBTV>2.0.ZU;2-I
Abstract
ZnSexTe1-x epitaxial films were grown by the VPE method and the compos ition x was successfully controlled by regulating the pressure ratio ( P-Se2/P-Te2) over the substrate. The films with homogeneous compositio n were grown on the substrate with a tilt angle of 60 degrees. From ph otoluminescence (PL) spectra, it was clarified that high quality films are obtainable by this method without incorporating impurities.