The initial deposition of Ge on Si(100) has been followed by TPD (temp
erature programmed desorption) and AES (Auger electron spectroscopy).
The Ge/Si(100) surfaces were prepared from repeated cycles of chemisor
ption and thermal desorption of Ge2H6 on the Si(100) surface. Simultan
eous exposures of UV light and Ge2H6 flux was shown to enhance the Ge
deposit per chemisorption/flash cycle. The desorption of D-2 from Ge/S
i(100) has also been studied. The D-2 desorption maxima shift to lower
temperatures with increasing Ge coverage until a new low-temperature
desorption state prevails. This fact provides a possible due to explai
n the acceleration in growth rate observed during SiGe alloy growth by
CVD when GeH4 is incorporated to the Si source gas.