GROWTH OF ZNSE THIN-FILMS BY RADICAL ASSISTED MOCVD METHOD

ZnSe epitaxial films were grown by the low pressure metal organic chem ical vapor deposition (MOCVD) technique using diethylzinc and selenium hydride as the source materials. When H radicals generated by a rf gl ow discharge are introduced into the reaction site, the growth rate of the ZnSe film was increased by a factor of 10. The reactivity between source materials and H radicals was investigated for different pressu res, substrate temperatures as well as for different concentrations of H radicals and source materials. With the assistance of H radicals, e pitaxial growth of ZnSe films on Si substrates was realized at substra te temperatures above 400 degrees C. If the plasma is produced by N-2 gas, ZnSe films could be obtained similar to that of the H-2 plasma en vironment, This method is seen to be a promising technique in doping n itrogen into ZnSe in producing p-ZnSe films.