GROWTH OF THE THIN-FILM CD-SI-AS SYSTEM BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

A possibility of growing thin films of CdSiAs2 was pursued by metalorg anic chemical vapor deposition (MOCVD) in the Cd-Si-As system, where d imethylcadmium (Cd(CH3)(2), DMCd), silane (SiH4) and arsine (AsH3) wer e used as the source gases. Pyrolysis experiments prior to the MOCVD i ndicated that DMCd accelerated the decomposition of SiH4. In the case of atmospheric MOCVD for the Cd-Si-As system, Si, SiAs and SiAs2 depos ited in the temperature range at about 873 K and Cd3As2 below 693 K, w hile no formation of CdSiAs2 was observed. Low pressure MOCVD by using SiH4 enriched source gases attained Si incorporation in the film grow n at 473-693 K. The X-ray diffraction patterns indicated the formation of CdSiAs2, which was in multi-phase deposits with SiAs, SiAs2, Cd3As 2 and CdAs2.