ULTRA-THIN GATE DIELECTRICS GROWN BY LOW-TEMPERATURE PROCESSES FOR APPLICATIONS TO ULSI DEVICES

When the dimension miniaturization of ultra-large-scale integrated (UL SI) devices is reduced below 0.25 mu m, ultra-thin gate dielectrics (< 6 nm) are indispensable for metal-oxide-semiconductor field effect tra nsistors (MOSFET). The properties and reliability of these dielectrics (oxides, oxynitrides, and nitrided oxides) are much more crucial than they are in thicker dielectrics. Low-temperature (less than or equal to 600 degrees C) processes also become essential for reducing defect generation and dopant redistribution as device dimensions shrink. Plas ma processes and low temperature chemical vapor deposition (CVD) have proven to be effective methods for achieving these goals with a reduce d thermal budget. In this paper, recent work on ultra-thin dielectrics grown by microwave afterglow plasma oxidation, electron cyclotron res onance plasma oxidation, and plasma-enhanced CVD are reviewed.