AES AND SRUPS STUDIES ON SURFACE PASSIVATION OF GAAS BY (NH4)(2)S-X SULFURIZATION TECHNIQUES

Authors
HSIEH JT HWANG HL
Citation
Jt. Hsieh et Hl. Hwang, AES AND SRUPS STUDIES ON SURFACE PASSIVATION OF GAAS BY (NH4)(2)S-X SULFURIZATION TECHNIQUES, Applied surface science, 92, 1996, pp. 222-226
Citations number
5
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
92
Year of publication
1996
Pages
222 - 226
Database
ISI
SICI code
0169-4332(1996)92:<222:AASSOS>2.0.ZU;2-I
Abstract
The surface passivation technique using (NH4)(2)S-x on GaAs(100) surfa ce was investigated. With this surface treatment, the effective barrie r heights for both Al-GaAs and Au-GaAs Schottky diodes were found to v ary with the metal work functions, which is clear evidence of the lowe r surface state density. AES and SRUPS measurements were done to chara cterize the surfaces including their compositions. In this paper, inte rpretations on this novel passivation effect are also provided.