XPS STUDY OF THE REACTION OF THE SI(100) SURFACE WITH A C2H4 BEAM

Authors
TAKAGAKI T IGARI Y TAKAOKA T KUSUNOKI I
Citation
T. Takagaki et al., XPS STUDY OF THE REACTION OF THE SI(100) SURFACE WITH A C2H4 BEAM, Applied surface science, 92, 1996, pp. 287-290
Citations number
6
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
92
Year of publication
1996
Pages
287 - 290
Database
ISI
SICI code
0169-4332(1996)92:<287:XSOTRO>2.0.ZU;2-2
Abstract
The carbide layers produced by reaction of a Si(100) surface with a C2 H4 beam were analyzed by high resolution X-ray photoelectron spectrosc opy (XPS). It was found that the reaction occurs above similar to 600 degrees C. The growth rate of the carbide layer at a beam flux of 2.7 x 10(15) molecules cm(-2) s(-1) increased with the surface temperature up to 675 degrees C, and then decreased with increasing the temperatu re. This phenomenon is explained in terms of the surface residence tim e of the incident molecules and the diffusion rate of the Si atoms fro m the substrate to the surface.