SCHOTTKY-BARRIER FORMATION FOR PASSIVATED SEMICONDUCTOR SURFACES

Authors
SAIZPARDO R RINCON R FLORES F
Citation
R. Saizpardo et al., SCHOTTKY-BARRIER FORMATION FOR PASSIVATED SEMICONDUCTOR SURFACES, Applied surface science, 92, 1996, pp. 362-366
Citations number
18
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
92
Year of publication
1996
Pages
362 - 366
Database
ISI
SICI code
0169-4332(1996)92:<362:SFFPSS>2.0.ZU;2-R
Abstract
The effect on the Schottky barrier height of H-monolayer passivation o f the Si(111) surface is explored. In our calculations we have analyze d K/Si(111) interfaces (theta = 1/3 ML) with and without a H interlaye r. Our results show that the effect of passivation is to reduce the Sc hottky barrier height, phi(bn), by 0.23 eV. Comparison is made with pr evious results on passivated GaAs(110) surfaces.