Ferrimagnetic Mn4N thin films were deposited on blank Si(100), SiNx-co
ated Si(100) and polyimide-coated Si(100) substrates by dc reactive ma
gnetron sputtering. Ordered Mn4N structure with (002) texture was iden
tified in these films at substrate temperatures from 150 to 250 degree
s C without further annealing. The films on blank Si(100) and SiNx-coa
ted Si(100) exhibit much higher coercivity than those on polyimide-coa
ted Si(100). However all films show a perpendicular coercivity of arou
nd two times higher than parallel coercivity. The saturation flux dens
ity is 240 to 610 G, increasing with elevated substrate temperature. T
he interface between substrate and film is found to dominate residual
stress in films and to affect the absolute value of coercivity. The ab
normal perpendicular magneto-anisotropy of these films is attributed t
o the columnar grains with ordered (002) structure and stress effect.