NOVEL LIGHT QUANTUM AND NUCLEAR-PARTICLE DETECTORS BASED ON THE AVALANCHE METAL-RESISTIVITY LAYER-SEMICONDUCTOR STRUCTURE

Citation
Zy. Sadygov et al., NOVEL LIGHT QUANTUM AND NUCLEAR-PARTICLE DETECTORS BASED ON THE AVALANCHE METAL-RESISTIVITY LAYER-SEMICONDUCTOR STRUCTURE, Applied surface science, 92, 1996, pp. 575-578
Citations number
6
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
92
Year of publication
1996
Pages
575 - 578
Database
ISI
SICI code
0169-4332(1996)92:<575:NLQAND>2.0.ZU;2-G
Abstract
The operation principle of novel semiconductor avalanche detectors bas ed on the metal-resistivity layer-semiconductor (MRS) structure is des cribed. Experimental studies of MRS detectors and results of the compa rison with known avalanche photodiodes are discussed. Possible applica tion fields are considered.