FORMATION OF BOTTOM OXIDES IN POROUS SILICON FILMS BY ANODIC-OXIDATION

Authors
LEE CH YEH CC LEE CH HSU KYJ
Citation
Ch. Lee et al., FORMATION OF BOTTOM OXIDES IN POROUS SILICON FILMS BY ANODIC-OXIDATION, Applied surface science, 92, 1996, pp. 621-625
Citations number
5
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
92
Year of publication
1996
Pages
621 - 625
Database
ISI
SICI code
0169-4332(1996)92:<621:FOBOIP>2.0.ZU;2-C
Abstract
The formation of bottom oxide by electrochemical oxidation in porous s ilicon layers is studied. A technique of controlling the oxide layer t hickness is developed. It is shown that the design of the anodization current level and of the porous silicon texture is an effective method for oxide formation control.