We have studied the effects of weak localization and electron-electron
interaction in the conductivity of Bi films at temperatures between 1
.1 and 4.2 K in the presence of a high-frequency electric field (simil
ar or equal to 9.4 GHz).The experiments were carried out under conditi
ons of no appreciable overheating of electrons due to a microwave radi
ation. The data obtained permit us to examine the influence of tempera
ture on quantum corrections Delta sigma(Omega) at high-frequency elect
ric field more comprehensively and reliably than in earlier works. The
experimental dependences Delta sigma(Omega, T) are found to be in goo
d agreement with the known theoretical models.