A STUDY OF HOLE MOBILITY IN DIARYLDIACETYLENES

Authors
VANNIKOV AV TAMEEV AR MALTSEV EI MILBURN GHW SHAND AJ WERNINCK AR WRIGHT J
Citation
Av. Vannikov et al., A STUDY OF HOLE MOBILITY IN DIARYLDIACETYLENES, Synthetic metals, 78(1), 1996, pp. 79-83
Citations number
31
Categorie Soggetti
Physics, Condensed Matter","Material Science","Polymer Sciences
Journal title
Synthetic metals → ACNP
ISSN journal
03796779
Volume
78
Issue
1
Year of publication
1996
Pages
79 - 83
Database
ISI
SICI code
0379-6779(1996)78:1<79:ASOHMI>2.0.ZU;2-M
Abstract
Thin homogeneous films exhibiting effective hole transport with drift mobility values up to 10(-4) cm(2) V-1 s(-1) are formed in the process of vacuum thermal deposition of monomeric diaryldiacetylenes. Basic t ransport characteristics and their dependence on the electric field, t emperature and chemical composition of the monomers are determined.