DOUBLE ACCEPTOR-DOPED GE - A NEW MEDIUM FOR INTER-VALENCE-BAND LASERS

Citation
E. Brundermann et al., DOUBLE ACCEPTOR-DOPED GE - A NEW MEDIUM FOR INTER-VALENCE-BAND LASERS, Applied physics letters, 68(22), 1996, pp. 3075-3077
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
68
Issue
22
Year of publication
1996
Pages
3075 - 3077
Database
ISI
SICI code
0003-6951(1996)68:22<3075:DAG-AN>2.0.ZU;2-B
Abstract
We report on intervalence-band laser emission from Be- and Zn-doped ge rmanium crystals. The duty cycle of 10(-3) at a repetition rate of 1 k Hz is one order of magnitude larger than the highest duty cycle report ed for p-Ge lasers doped by group II accepters. This improvement is du e to the much larger hole binding energy of double accepters Be and Zn which results in a strong reduction of the internal absorption of the generated far-infrared radiation. Laser action has been achieved with crystal volumes as small as 0.04 cm(-3), and a laser pulse length df 25 mu s has been reached. Germanium crystals doped with these accepter s may offer an opportunity for achieving the ultimate goal of continuo us wave operation. (C) 1996 American Institute of Physics.