LOCALIZED KERR-TYPE NONLINEARITIES IN GAAS ALGAAS MULTIPLE-QUANTUM-WELL STRUCTURES AT 1.55-MU-M/

Authors
HAMILTON CJ MARSH JH HUTCHINGS DC AITCHISON JS KENNEDY GT SIBBETT W
Citation
Cj. Hamilton et al., LOCALIZED KERR-TYPE NONLINEARITIES IN GAAS ALGAAS MULTIPLE-QUANTUM-WELL STRUCTURES AT 1.55-MU-M/, Applied physics letters, 68(22), 1996, pp. 3078-3080
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
22
Year of publication
1996
Pages
3078 - 3080
Database
ISI
SICI code
0003-6951(1996)68:22<3078:LKNIGA>2.0.ZU;2-D
Abstract
We report the use of a novel impurity free vacancy disordering techniq ue which has been used to produce waveguides with different Kerr-type nonlinear coefficients. The technique relies on standard SiO2 dielectr ic caps to promote disordering and Ga2O3 caps to suppress disordering. Band-gap shifts of around 40 nm and consequent changes in nz of more than 60% are reported. (C) 1996 American Institute of Physics.