BAND-EDGE PHOTOLUMINESCENCE FROM PSEUDOMORPHIC SI0.96SN0.04 ALLOY

Band-edge related photoluminescence from a strained Si0.96Sn0.04 alloy grown by molecular beam epitaxy on Si(100) substrate has been seen fo r the first time. We report band-edge related photoluminescence from a compressively strained pseudomorphic Si0.96Sn0.04 alloy. The luminesc ence observed consisted of two dominant features, a well-resolved band -edge luminescence consisting of a no-phonon and a transverse optical phonon replica, and a deep-level broad luminescence peak around 770 me V. The band-edge feature is attributed to a no-phonon free excitonic r ecombination in the binary alloy and exhibits a near linear power depe ndence; We also observe a red shift of the energy gap of Si0.96Sn0.04 alloy with respect to Si, which corresponds to the bulk alloy effect. (C) 1996 American Institute of Physics.