PULSED SUPERSONIC JET EPITAXY - A NONTHERMAL APPROACH TO SILICON GROWTH

In this letter, we demonstrate a unique approach for low temperature e pitaxial growth of single crystal silicon films on Si(100). Pulsed sup ersonic jet epitaxy (PSJE), employs high kinetic energy jets of a disi lane-hydrogen mixture incident on the surface leading to layer by laye r growth. Precise control of film thickness and significantly higher s ticking coefficients are demonstrated. Growth rate dependence of pulse frequency and its implications are discussed. We have been able to re producibly deposit good quality single crystalline films at temperatur es as low as 400 degrees C with this technique, without the use of any external activation. (C) 1995 American Institute of Physics.