SITE-SENSITIVE YIELD OF ATOMIC-EMISSION INDUCED BY LASER IRRADIATION ON SI(111)-7X7 SURFACE

Authors
ISHIKAWA K KANASAKI J TANIMURA K NAKAI Y
Citation
K. Ishikawa et al., SITE-SENSITIVE YIELD OF ATOMIC-EMISSION INDUCED BY LASER IRRADIATION ON SI(111)-7X7 SURFACE, Solid state communications, 98(10), 1996, pp. 913-916
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
98
Issue
10
Year of publication
1996
Pages
913 - 916
Database
ISI
SICI code
0038-1098(1996)98:10<913:SYOAIB>2.0.ZU;2-G
Abstract
The atomic structure of the Si(111)-7x7 surface after irradiation of 2 .48 eV laser pulses has been studied using scanning tunneling microsco py. In the range of fluence at which no indication of melting Is obser ved, the examination of more than 300 unit cells on irradiated surface has revealed that the number of vacancies formed at the center-adatom site is much larger than that at the corner-adatom site, showing the strong site-dependent yield of laser-induced atomic emission. Copyrigh t (C) 1996 Published by Elsevier Science Ltd