Jt. Schick et Sm. Bose, ELECTRONIC-STRUCTURE OF A BURIED NISI2 OR COSI2 LAYER IN BULK SI, Physical review. B, Condensed matter, 53(19), 1996, pp. 12609-12612
An empirical tight-binding Green's function model is applied to a sing
le layer of nickel disilicide or cobalt disilicide embedded in bulk si
licon. The electronic band structure of localized and extended states
in the vicinity of the bulk silicon band gap is investigated.