INFLUENCE OF ENERGY-LEVEL ALIGNMENT ON TUNNELING BETWEEN COUPLED QUANTUM DOTS

Authors
DIXON D KOUWENHOVEN LP MCEUEN PL NAGAMUNE Y MOTOHISA J SAKAKI H
Citation
D. Dixon et al., INFLUENCE OF ENERGY-LEVEL ALIGNMENT ON TUNNELING BETWEEN COUPLED QUANTUM DOTS, Physical review. B, Condensed matter, 53(19), 1996, pp. 12625-12628
Citations number
21
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
53
Issue
19
Year of publication
1996
Pages
12625 - 12628
Database
ISI
SICI code
0163-1829(1996)53:19<12625:IOEAOT>2.0.ZU;2-J
Abstract
We have measured the nonlinear transport properties of two GaAs/AlxGa1 -xAs quantum dots connected in series. At high source-drain bias the C oulomb oscillations develop a sharp overstructure. The behavior of thi s overstructure is studied as a function of the electrostatic potentia ls of the dots. The structure is shown to arise from the modulation of interdot tunneling that occurs as the quantum levels in the two dots are aligned and dealigned.