MICROWAVE-ABSORPTION IN INSULATING DIELECTRIC IONIC-CRYSTALS INCLUDING THE ROLE OF POINT-DEFECTS

Citation
Bs. Meng et al., MICROWAVE-ABSORPTION IN INSULATING DIELECTRIC IONIC-CRYSTALS INCLUDING THE ROLE OF POINT-DEFECTS, Physical review. B, Condensed matter, 53(19), 1996, pp. 12777-12785
Citations number
29
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
53
Issue
19
Year of publication
1996
Pages
12777 - 12785
Database
ISI
SICI code
0163-1829(1996)53:19<12777:MIIDII>2.0.ZU;2-4
Abstract
A theoretical model of microwave absorption in linear dielectric (nonf erroelectric) ionic crystals that takes into account the presence of p oint defects has been synthesized and specifically applied to NaCl sin gle crystals by considering all relevant interaction mechanisms betwee n a harmonic electric field and single-crystal ionic crystalline solid s, including ionic conduction, dielectric relaxation, and multiphonon processes. The loss factor epsilon '' f has been measured by a cavity resonator insertion technique for nearly pure and Ca2+ doped NaCl sing le crystals at frequencies from 2 to 16 GHz and at the temperatures fr om 300 to 700 K. The experimental results are in good agreement with t he theoretical model. The theoretical model predicts a transition betw een low- and high-temperature absorption processes that may partly acc ount for the phenomenon of thermal runaway observed during microwave p rocessing of ceramics.