POSSIBILITY OF A METASTABLE STATE FOR A TRANSITION-METAL IMPURITY IN SEMICONDUCTOR

Authors
Citation
P. Dahan et V. Fleurov, POSSIBILITY OF A METASTABLE STATE FOR A TRANSITION-METAL IMPURITY IN SEMICONDUCTOR, Physical review. B, Condensed matter, 53(19), 1996, pp. 12845-12854
Citations number
33
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
53
Issue
19
Year of publication
1996
Pages
12845 - 12854
Database
ISI
SICI code
0163-1829(1996)53:19<12845:POAMSF>2.0.ZU;2-A
Abstract
A transition-metal impurity in a semiconductor can be shifted from its high symmetry substitutional position due to the Jahn-Teller interact ion. An interplay of the spin-orbit and Jahn-Teller interactions may l ead to a double-well potential for such an impurity in the configurati on coordinates. One of these new states can be metastable and characte rized by extremely long relaxation time especially at low temperatures . This allows us to explain the observation of the line complementing the intracenter transition line to the forbidden energy gap both in th e luminescence and in the photoluminescence excitaton spectra. Various other puzzling experimental observations are discussed and explained on the basis of this mechanism.