RADIATIVE RECOMBINATION IN CYLINDRICAL GAAS-(GA,AL)AS QUANTUM-WELL WIRES UNDER QUASI-STATIONARY EXCITATION CONDITIONS

A quantum-mechanical calculation of radiative recombinations in cylind rical GaAs-(Ga,Al)As quantum-well wires excited by a cw laser in a pho toluminescence experiment under quasistationary excitation conditions is performed. We work within the effective-mass approximation and the parabolic-band model for describing both electrons and holes, and cons ider, in the steady state, the interband absorption, and some radiativ e recombination mechanisms, such as recombination of electrons with fr ee holes and with holes bound at accepters. Carrier densities and elec tron-hole recombination decay times are calculated at room temperature and as functions of the laser intensity. For doped quantum-well wires , it is shown that the presence of accepters substantially modifies th e dependence on the laser intensity of the above quantities.