SELF-CONSISTENT TIGHT-BINDING CALCULATIONS OF ELECTRONIC AND OPTICAL-PROPERTIES OF SEMICONDUCTOR NANOSTRUCTURES

Optical properties and electronic states of semiconductor nanostructur es are calculated by using tight-binding models which account for vale nce band mixing, strain and external applied potentials in a self-cons istent fashion. An appropriate formulation of the optical susceptibili ty in the tight-binding basis is given without introducing-any additio nal parameters. Results for strained and unstrained systems are given. Copyright (C) 1996 Published by Elsevier Science Ltd.