COMPOSITION DEPENDENCE OF THE BOND LENGTHS IN THE QUATERNARY SEMICONDUCTING ALLOY (A(1-X)B(X)C(1-Y)D(Y))

Authors
SHIM KH BAE JW JEONG SY MOH HJ TALWAR DN
Citation
Kh. Shim et al., COMPOSITION DEPENDENCE OF THE BOND LENGTHS IN THE QUATERNARY SEMICONDUCTING ALLOY (A(1-X)B(X)C(1-Y)D(Y)), Solid state communications, 98(9), 1996, pp. 825-828
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
98
Issue
9
Year of publication
1996
Pages
825 - 828
Database
ISI
SICI code
0038-1098(1996)98:9<825:CDOTBL>2.0.ZU;2-G
Abstract
The composition variation of the bond lengths in the quaternary semico nducting alloy has been formulated in terms of the distorted bond leng th by substitutional impurity and the host bond length, in which the e ffect of composition disorder is involved properly. We calculated the bond lengths in In1-xGaxAs1-yPy alloy through whole composition range and examined the alloy disorder extent against the composition mixing ratio. Copyright (C) 1996 Elsevier Science Ltd.