EPITAXIAL-GROWTH OF GAP BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

Epitaxial films of gallium phosphide, GaP, have been grown by remote p lasma enhanced chemical vapor deposition on GaP and Si substrates. Ato mic hydrogen and phosphorus hydrides are generated from molecular hydr ogen and phosphorus vapor in a remote radio-frequency plasma. Trimethy lgallium is injected downstream from the plasma region where mixing an d interaction with activated species extracted from the plasma occur. Homo- and heteroepitaxial GaP films have been produced on GaP and Si s ubstrates respectively, at growth temperatures of 590-degrees-C and hi gher. Chemical depth profiles of GaP/Si heterostructures indicate that reduced growth temperatures promote abrupt chemical interfaces and im prove heterostructure electrical properties. Both homo- and heterodiod es have been fabricated from the above epitaxial structures, and their respective properties are discussed.