SI-DOPING IN GAN GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY USING TETRAETHYLSILANE

Authors
KANEDA N DETCHPROHM T HIRAMATSU K SAWAKI N
Citation
N. Kaneda et al., SI-DOPING IN GAN GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY USING TETRAETHYLSILANE, JPN J A P 2, 35(4B), 1996, pp. 468-470
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
35
Issue
4B
Year of publication
1996
Pages
468 - 470
Database
ISI
SICI code
Abstract
A Si-doped GaN layer was grown by MOVPE (metal-organic vapor phase epi taxy) using tetraethylsilane (TeESi) as the dopant. The Hall effect wa s studied between 11 K and 300 K. The electron concentration was obser ved to increase with the increase in the TeESi flow rate. The activati on energy E(D) for ionization of shallow donors was determined to be 2 7 meV.