Y. Kumagai et al., 4-MONOLAYER-HEIGHT LAYER-BY-LAYER GROWTH AND INCREASE OF THE CRITICALTHICKNESS OF GE HETEROEPITAXY ON BORON-PREADSORBED SI(111) SURFACE, JPN J A P 2, 35(4B), 1996, pp. 476-478
Heteroepitaxy of Ge was performed onto clean Si(111)7 x 7 and 1-monola
yer (ML) boron-preadsorbed Si(111)root 3 x root 3R30 degrees-B surface
s held at 500 degrees C. Both cases of growth showed the Stranski-Kras
tanov (SK) growth mode. On the clean surface, layer-by-layer growth by
2-ML-height two-dimensional (2D) islands lasted for up to 6 ML of Ge
growth, and then relaxed 3D islands began to be formed. On the boron-p
readsorbed surface, however, critical thickness for the formation of 3
D islands increased to 8 ML due to suppression of Ge surface migration
by surface-segregated boron atoms. It was confirmed by atomic force m
icroscopy (AFM) that the height of 2D islands appearing in the layer-b
y-layer growth process changed from the normal 2 ML to 4 ML on the bor
on-preadsorbed surface.