A NEW SINGLE-LAYER RESIST FOR 193-NM LITHOGRAPHY

A positive chemically amplified resist for 193-nm lithography has been developed. The resist consists of a copolymer of tetrahydro-4-methyl- 2-oxo-2H-pyran-4-yl methacrylate and 2-methyl-2-adamantyl methacrylate and a photoacid generator. The acid-catalyzed deprotection of the pro tective groups leads to a large polarity change in the exposed region of the resist films and it allows for high-contrast patterning with hi gh sensitivity. Using an ArF excimer laser exposure system, a 0.17-mu m lines and spaces pattern has been resolved.