PREPARATION OF LAYERED FERROELECTRIC BI2SRTA2O9 SINGLE-CRYSTAL PLATELETS

Layered ferroelectric Bi2SrTa2O9 is attracting much attention as a fat igue-free material for ferroelectric nonvolatile memory devices. We ha ve successfully synthesized this single-crystal platelet without any i mpurity phases by the self-flux method. The largest crystals measure a bout 1 mm x 1 mm x 5 mu m, and the lattice parameters were estimated t o be a = 0.5528 nm and c = 2.498 nm, assuming a tetragonal cell. The c hemical composition is 1.92:1.10:2.00 in an atomic ratio of Bi:Sr:Ta, from ICP-AES analysis. By wet etching, the crystal structure was found to be decomposed anisotropically, leaving only the c-axis framework. The step height of the topmost surface observed by atomic force micros copy (AFM) was 1.2 to 1.3 nm, which corresponds to half of the c-axis length (about 2.5 nm). Through thermal analysis, the thermal anomaly o riginating in ferroelestric-paraelectric phase transition was not obse rved and there was Little evaporation of Bi compounds.